2SC3944A Description
·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 180V(Min) ·Good Linearity of hFE ·plement to Type 2SA1535A ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For low frequency driver and high power amplification. 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC3944A TC=25℃ unless otherwise specified SYMBOL...