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2SC4020 - NPN Transistor

General Description

Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@ IC= 0.7A Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V (Min) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed switching regulator and

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isc Silicon NPN Power Transistor DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@ IC= 0.7A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V (Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 900 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 3 A ICM Collector Current-Pulse 6 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 1.