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2SC4075 - NPN Transistor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min) Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for color TV chroma output, sound output and B/W TV video output, audio output applicati

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min) ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for color TV chroma output, sound output and B/W TV video output, audio output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 0.2 A ICM Collector Current-Peak Collector Power Dissipation @TC=25℃ PC Collector Power Dissipation @Ta=25℃ TJ Junction Temperature 0.7 A 10 W 2 150 ℃ Tstg Storage Temperature -55~150 ℃ 2SC4075 isc website：www.iscsemi.