Datasheet4U Logo Datasheet4U.com

2SC4106 - NPN Transistor

General Description

High Collector-Emitter Breakdown Voltage : V(BR)CEO= 400V(Min.) High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator applications ABSOLUTE MAXIMUM RA

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SC4106 NPN Triple Diffused Planar Silicon Transistor Sanyo Semicon Device
2SC4106 SILICON POWER TRANSISTOR SavantIC
2SC4100 NPN Silicon Transistor ROHM
2SC4102 Silicon Transistor GME
2SC4102 High-voltage Amplifier Transistor Rohm

Other Datasheets by Inchange Semiconductor

Part Number Description
2SC4105 NPN Transistor
2SC4107 NPN Transistor
2SC4108 NPN Transistor
2SC4109 NPN Transistor
2SC4110 NPN Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage : V(BR)CEO= 400V(Min.) ·High Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching regulator applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak 14 A IB Base Current-Continuous 3 A Collector Power Dissipation@TC=25℃ 50 PC W Collector Power Dissipation@Ta=25℃ 1.75 TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC4106 isc website：www.iscsemi.