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2SC4107 - NPN Transistor

General Description

High Collector-Emitter Breakdown Voltage : V(BR)CEO= 400V(Min.) High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator applications ABSOLUTE MAXIMUM RA

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isc Silicon NPN Power Transistor 2SC4107 DESCRIPTION ·High Collector-Emitter Breakdown Voltage : V(BR)CEO= 400V(Min.) ·High Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching regulator applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak 20 A IB Base Current-Continuous 3.5 A Collector Power Dissipation@TC=25℃ 60 PC W Collector Power Dissipation@Ta=25℃ 1.75 TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.