Datasheet4U Logo Datasheet4U.com

2SC4123 - NPN Transistor

General Description

High Breakdown Voltage- : V(BR)CBO= 1500V(Min) High Switching Speed High Reliability Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Ultrahigh-definition CRT display horizontal deflection output appli

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SC4123 NPN Transistor Sanyo Semicon Device
2SC4123 SILICON POWER TRANSISTOR SavantIC
2SC4121 PNP/NPN Epitaxial Planar Silicon Transistors Sanyo Semicon Device
2SC4124 NPN Transistor Sanyo Semicon Device
2SC4124 SILICON POWER TRANSISTOR SavantIC

Other Datasheets by Inchange Semiconductor

Part Number Description
2SC4124 NPN Transistor
2SC4125 Silicon NPN Power Transistor
2SC4129 Silicon NPN Power Transistor
2SC4105 NPN Transistor
2SC4106 NPN Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc Silicon NPN Power Transistor DESCRIPTION ·High Breakdown Voltage- : V(BR)CBO= 1500V(Min) ·High Switching Speed ·High Reliability ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Ultrahigh-definition CRT display horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 7 A ICP Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 16 A 3.0 W 60 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC4123 isc website：www.iscsemi.