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2SC4157 - NPN Transistor

General Description

High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 450V(Min) High Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

applications.

High

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4157 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 450V(Min) ·High Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulator and high voltage switching applications. ·High speed DC-DC converter applications.