Datasheet4U Logo Datasheet4U.com

2SC4265 - NPN Transistor

General Description

Low Noise High Gain 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for use in VHF RF amplifier, local oscillator, mixer.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SC4265 Silicon NPN Transistor Hitachi Semiconductor
2SC4260 Silicon NPN Transistor Hitachi Semiconductor
2SC4261 Silicon NPN Transistor Hitachi Semiconductor
2SC4262 Silicon NPN Transistor Hitachi Semiconductor
2SC4264 Silicon NPN Transistor Hitachi Semiconductor

Other Datasheets by Inchange Semiconductor

Part Number Description
2SC4261 NPN Transistor
2SC4262 NPN Transistor
2SC4264 NPN Transistor
2SC4205 NPN Transistor
2SC4230 Silicon NPN Power Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc Silicon NPN RF Transistor INCHANGE Semiconductor 2SC4265 DESCRIPTION ·Low Noise ·High Gain ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in VHF RF amplifier, local oscillator, mixer. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 20 V VEBO Emitter-Base Voltage 3.0 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 50 mA 0.1 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.