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isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC4273
DESCRIPTION ·High Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 400V(Min) ·High Switching Speed ·High Reliability ·Low Collector Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Switching regulators ·DC-DC converter ·Solid state relay ·General purpose power amplifiers
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VCBO
Collector-Base Voltage
500
VCEO
Collector-Emitter Voltage
400
VEBO
Emitter-Base voltage
10
IC
Collector Current-Continuous
5
IB
Base Current-Continuous
2
PC
Collector Power Dissipation @ TC=25℃
40
TJ
Junction Temperature
150
Tstg
Storage Temperature Range
-55~150
UNIT V V V A A