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2SC4275 - NPN Transistor

General Description

Low saturation voltage High Switching Speed High reliability 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators High speed DC-DC converter applications Solid state relay

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isc Silicon NPN Power Transistor DESCRIPTION ·Low saturation voltage ·High Switching Speed ·High reliability ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulators ·High speed DC-DC converter applications ·Solid state relay ·General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 10 V IC Collector Current-Continuous 10 A IB Base Current-Continuous Pc Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 3 A 80 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ 2SC4275 isc website：www.iscsemi.