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2SC4303 - NPN Transistor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V(Min) High Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for horizontal deflection output applications.

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4303 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V(Min) ·High Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1400 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 6 A ICM Collector Current-Peak 12 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 3 A 80 W 150 ℃ Tstg Storage Temperature -55~150 ℃ isc Website：www.iscsemi.