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2SC4327 - NPN Transistor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 35V(Min) Low Collector Saturation Voltage- : VCE(sat)= 0.5V(Max)@ (IC= 5A, IB= 0.3A) Complement to Type 2SA1643 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICAT

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4327 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 35V(Min) ·Low Collector Saturation Voltage- : VCE(sat)= 0.5V(Max)@ (IC= 5A, IB= 0.3A) ·Complement to Type 2SA1643 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 35 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 7 A 25 W 150 ℃ Tstg Storage Temperature -55~150 ℃ isc Website：www.iscsemi.