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2SC4370 - NPN Transistor

General Description

High Collector-Emitter Breakdown Voltage VCEO= 160V(Min) Complement to Type 2SA1659

board or bushing when mounting.

100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4370 DESCRIPTION ·High Collector-Emitter Breakdown Voltage VCEO= 160V(Min) ·Complement to Type 2SA1659 ·Full-mold package that does not require an insulating board or bushing when mounting. ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 5.0 V IC(DC) Collector Current(DC) 1.5 A IB(DC) PC TJ Base Current Collector Power Dissipation @TC=25℃ Junction Temperature Tstg Storage Temperature 0.15 A 20 W 150 ℃ -55~150 ℃ isc Website：www.