Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 120V(Min)
Good Linearity of hFE
Complement to Type 2SA1671
100% avalanche tested
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for audio and general purpose appl
The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC4386
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 120V(Min) ·Good Linearity of hFE ·Complement to Type 2SA1671 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for audio and general purpose applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
160
V
VCEO
Collector-Emitter Voltage
120
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
8
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
3
A
75
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
isc Website：www.iscsemi.
2SC4386 Datasheet
