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2SC4426 - NPN Transistor

General Description

High Breakdown Voltage- : V(BR)CEO= 800V(Min) Fast Switching speed Wide Area of Safe Operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator Applications ABSOLUTE

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4426 DESCRIPTION ·High Breakdown Voltage- : V(BR)CEO= 800V(Min) ·Fast Switching speed ·Wide Area of Safe Operation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching regulator Applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1100 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 3 A ICP Collector Current-Pulse 10 A IB Base Current-Continuous Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 1.