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2SC4448 - NPN Transistor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 250V(Min) High DC Current Gain 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Chroma output applications for HDTV Video output applications for high

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4448 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 250V(Min) ·High DC Current Gain ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Chroma output applications for HDTV ·Video output applications for high resolution display ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 250 V VCEO Collector-Emitter Voltage 250 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 0.15 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature Tstg Storage Temperature 50 mA 10 W 150 ℃ -55~150 ℃ isc website：www.iscsemi.