Fast switching speed
Silicon NPN planar diffused planar transistor
100% avalanche tested
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Audio temperature compensation and general purpose
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYM
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isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC4507
DESCRIPTION ·Fast switching speed ·Silicon NPN planar diffused planar transistor ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Audio temperature compensation and general purpose
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
500
V
VCEO
Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
5
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @TC=25℃
TJ
Junction Temperature
Tstg
Storage Temperature
1
A
40
W
150
℃
-55~150 ℃
isc website:www.iscsemi.