High Breakdown Voltage
High Switching Speed
Low saturation voltage
Built in damper diode
100% avalanche tested
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Horizontal deflection output application
ABSOLUTE MAXIMU
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isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC4531
DESCRIPTION ·High Breakdown Voltage ·High Switching Speed ·Low saturation voltage ·Built in damper diode ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Horizontal deflection output application
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1500
V
VCEO
Collector-Emitter Voltage
600
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current- Continuous
10
A
ICM
Collector Current- Peak
20
A
IB
Base Current
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
5
A
50
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
isc Website：www.iscsemi.
2SC4531 Datasheet
