The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
isc Silicon NPN RF Transistor
INCHANGE Semiconductor
2SC4537
DESCRIPTION ·Low Noise
NF = 1.6 dB TYP., @VCE = 5 V, IC = 5 mA, f = 900 MHz ·High Power Gain
PG = 10 dB TYP. @VCE = 5 V, IC = 20 mA, f = 900 MHz ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for VHF, UHF low noise amplifier.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
15
V
VCEO Collector-Emitter Voltage
11
V
VEBO
Emitter-Base Voltage
2
V
IC
Collector Current-Continuous
PC
Collector Power Dissipation @TC=25℃
TJ
Junction Temperature
50
mA
0.1
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
isc website:www.iscsemi.