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2SC4549 - NPN Transistor

General Description

Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 60V(Min) High DC Current Gain- : hFE= 100(Min)@ (VCE= 2V , IC= 1A) Low Saturation Voltage- : VCE(sat)= 0.3V(Max)@ (IC= 3A, IB= 0.15A) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reli

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 60V(Min) ·High DC Current Gain- : hFE= 100(Min)@ (VCE= 2V , IC= 1A) ·Low Saturation Voltage- : VCE(sat)= 0.3V(Max)@ (IC= 3A, IB= 0.15A) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as a driver in DC/DC converters and actuators. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO VEBO IC ICM IB PT TJ Tstg Collector-Base Voltage 100 V Collector-Emitter Voltage 60 V Emitter-Base Voltage 7.0 V Collector Current-Continuous 5.0 A Collector Current-Pulse 10 A Base Current-Continuous 2.5 A Total Power Dissipation @TC=25℃ 25 W Total Power Dissipation @Ta=25℃ 2.