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2SC4550 - NPN Transistor

General Description

Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 60V(Min) High DC Current Gain- : hFE= 100(Min)@ (VCE= 2V , IC= 1.5A) Low Saturation Voltage- : VCE(sat)= 0.3V(Max)@ (IC= 4A, IB= 0.2A) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATION

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 60V(Min) ·High DC Current Gain- : hFE= 100(Min)@ (VCE= 2V , IC= 1.5A) ·Low Saturation Voltage- : VCE(sat)= 0.3V(Max)@ (IC= 4A, IB= 0.2A) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as a driver in DC/DC converters and actuators. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7.0 V IC Collector Current-Continuous 7.0 A ICM Collector Current-Pulse 14 A IB Base Current-Continuous 3.5 A Total Power Dissipation @TC=25℃ 30 PT W Total Power Dissipation @Ta=25℃ 2.