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2SC4557 - NPN Transistor

General Description

High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 550V(Min) High Switching Speed Wide Area of Safe Operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator and ge

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4557 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 550V(Min) ·High Switching Speed ·Wide Area of Safe Operation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching regulator and general purpose applications.