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isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC4622
DESCRIPTION ·High Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 400V(Min) ·High Switching Speed ·Low Collector Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Switching regulators ·Ultrasonic generators ·Solid state relay ·General purpose power amplifiers
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
500
V
VCEO
Collector-Emitter Voltage
400
V
VEBO
Emitter-Base voltage
10
V
IC
Collector Current-Continuous
7
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
2
A
50
W
150
℃
Tstg
Storage Temperature Range
-55~150
2SC4622 Datasheet
