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2SC4626J - Silicon NPN Transistor

Key Features

  • 3 (0.375) 0.85.
  • +00..0035 1.60±0.05 5˚.
  • Optimum for RF amplification of FM/AM radios.
  • High transition frequency fT 12 (0.80).
  • SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing 0.27±0.02 (0.50)(0.50).
  • Absolute Maximum Ratings Ta = 25°C 5˚ / Parameter Symbol Rating Unit 0 to 0.02 0.70.
  • +00..0035 e Collector-base voltage (Emitter open) VCBO 30 V 0.10 max. pe) Collector-emitter.

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Transistors 2SC4626J Silicon NPN epitaxial planar type 0.80±0.05 For high-frequency amplification 1.60+–00..0035 1.00±0.05 Unit: mm 0.12+–00..0013 ■ Features 3 (0.375) 0.85–+00..0035 1.60±0.05 5˚ • Optimum for RF amplification of FM/AM radios • High transition frequency fT 12 (0.80) • SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing 0.27±0.02 (0.50)(0.50) ■ Absolute Maximum Ratings Ta = 25°C 5˚ / Parameter Symbol Rating Unit 0 to 0.02 0.70–+00..0035 e Collector-base voltage (Emitter open) VCBO 30 V 0.10 max. pe) Collector-emitter voltage (Base open) VCEO 20 V nc d ge.