15.0±0.3 11.0±0.2
5.0±0.2 3.2
0.7
q High-speed switching
12.5 3.5 15.0±0.2
q High collector to base voltage VCBO q Wide area of safe operation (ASO)
φ3.2±0.1
q Full-pack package which can be installed to the heat sink with
/ one screw
21.0±0.5
2.0±0.2
2.0±0.1
e s Absolute Maximum Ratings (TC=25˚C)
c type) Parameter
Symbol
Ratings
Unit
16.2±0.5
Solder Dip
n d tage. ued Collector to base voltage
VCBO
500
V
le s ntin VCES
500
V
a e c co Collector to emitter voltage
cy is.
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Power Transistors
2SC4621
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
Unit: mm
s Features
15.0±0.3 11.0±0.2
5.0±0.2 3.2
0.7
q High-speed switching
12.5 3.5 15.0±0.2
q High collector to base voltage VCBO q Wide area of safe operation (ASO)
φ3.2±0.1
q Full-pack package which can be installed to the heat sink with
/ one screw
21.0±0.5
2.0±0.2
2.0±0.1
e s Absolute Maximum Ratings (TC=25˚C)
c type) Parameter
Symbol
Ratings
Unit
16.2±0.5
Solder Dip
n d tage.
2SC4621 Datasheet
