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2SC4623 - PNP/NPN Epitaxial Planar Silicon Transistors

Key Features

  • High fT : fT=400MHz (typ).
  • High breakdown voltage : VCEO≥250V(min).
  • High current.
  • Small reverse transfer capacitance and excellent high-frequnecy characteristic : Cre=3.4pF (NPN), 4.2pF (PNP).
  • Complementary pair with the 2SA1777/2SC4623.
  • Adoption of FBET process. Package Dimensions unit:mm 2042B [2SA1777/2SC4623] ( ) : 2SA1777 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-B.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number:EN3644 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1777/2SC4623 Very High-Definition CRT Display Video Output Applications Features · High fT : fT=400MHz (typ). · High breakdown voltage : VCEO≥250V(min). · High current. · Small reverse transfer capacitance and excellent high-frequnecy characteristic : Cre=3.4pF (NPN), 4.2pF (PNP). · Complementary pair with the 2SA1777/2SC4623. · Adoption of FBET process.