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2SC4765 Datasheet

Manufacturer: Inchange Semiconductor
2SC4765 datasheet preview

2SC4765 Details

Part number 2SC4765
Datasheet 2SC4765-INCHANGE.pdf
File Size 187.84 KB
Manufacturer Inchange Semiconductor
Description NPN Transistor
2SC4765 page 2 2SC4765 page 3

2SC4765 Overview

·High Breakdown Voltage- : VCBO= 1700V (Min) ·High Switching Speed ·Low Saturation Voltage ·Built-in Damper Diode ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Horizontal deflection output for medium resolution display. MAX UNIT V(BR)EBO Emitter-Base Breakdown Voltage IE= 300mA.

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