Silicon NPN triple diffused
High Switching Speed
High Breakdown Voltage
High speed switching time
100% avalanche tested
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Character display horizontal deffection output
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isc Silicon NPN Power Transistor
isc Product Specification
2SC4789
DESCRIPTION ·Silicon NPN triple diffused ·High Switching Speed ·High Breakdown Voltage ·High speed switching time ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Character display horizontal deffection output ·Suitable for large size CRT display
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
1500
V
VCEO
Collector-Emitter Voltage
800
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
25
A
ICM
Collector Current-Pulse
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
30
A
150
W
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
isc website：www.iscsemi.
2SC4789 Datasheet
