Overview: Transistor 2SC4787
Silicon NPN epitaxial planer type
For intermediate frequency amplification
Unit: mm
6.9±0.1 1.05 2.5±0.1 (1.45) ±0.05 0.8 q q q 0.45–0.05 +0.1 (Ta=25˚C)
1 2 3 0.45–0.05 s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg 2.5±0.5 2.5±0.5 +0.1 Ratings 45 35 4 50 600 150 –55 ~ +150 Unit V V V mA mW ˚C ˚C
1.2±0.1 0.65 max.
0.1 0.45+ – 0.05 Note: In addition to the lead type shown in the upper figure, the type as shown in the lower figure is also available. 1:Emitter 2:Collector 3:Base MT1 Type Package 2.5±0.1 (HW type) s Electrical Characteristics (Ta=25˚C)
Parameter Symbol ICBO VCBO VCEO VEBO hFE VCE(sat) Cre PG fT Conditions VCB = 20V, IE = 0 IC = 100µA, IE = 0 IC = 1mA, IB = 0 IE = 100µA, IC = 0 VCE = 10V, IC = 10mA IC = 20mA, IB = 2mA VCB = 10V, IE = –1mA, f = 10.7MHz VCB = 10V, IE = –10mA, f = 58MHz VCB = 10V, IE = –10mA, f = 100MHz 18 300 500 45 35 4 20 50 100 0.5 1.5 V pF dB MHz min typ max 0.1 Unit µA V V V Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Common emitter reverse transfer capacitance Power gain Transition frequency 14.5±0.5 0.85 High transition frequency fT. Satisfactory linearity of forward current transfer ratio hFE. Allowing supply with the radial taping. 0.65 max. 1.0 3.5±0.1 0.
