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2SC4782 - NPN TRANSISTOR

Key Features

  • q q q 2.8.
  • 0.3 0.65±0.15 +0.2 +0.25 1.5.
  • 0.05 0.65±0.15 2 Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature VCBO VCES VEBO ICP IC PC Tj Tstg 25 20 5 300 200 200 150.
  • 55 ~ +150 V V V mA mA mW ˚C ˚C 1:Base 2:Emitter 3:Collector JEDEC:TO.
  • 236 EIAJ:SC.
  • 59 Mini Type Package Marking symbol : DV s Electrical Characte.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Transistor 2SC4782 Silicon NPN epitaxial planer type For high speed switching Unit: mm s Features q q q 2.8 –0.3 0.65±0.15 +0.2 +0.25 1.5 –0.05 0.65±0.