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2SC4796 - NPN Transistor

General Description

High Breakdown Voltage- : V(BR)CBO= 1700V(Min) High Switching Speed High Reliability 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Ultrahigh-definition color display horizontal deflection output ap

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4796 DESCRIPTION ·High Breakdown Voltage- : V(BR)CBO= 1700V(Min) ·High Switching Speed ·High Reliability ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Ultrahigh-definition color display horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1700 V VCEO Collector-Emitter Voltage 900 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 6 A ICP Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 16 A 2.