Datasheet4U Logo Datasheet4U.com

2SC4847 - NPN Transistor

General Description

Low Collector Saturation Voltage Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V (Min) Good Linearity of hFE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in humidifier , DC/DC converter and general pu

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SC4840 NPN TRANSISTOR Toshiba Semiconductor
2SC4841 NPN TRANSISTOR Toshiba Semiconductor
2SC4842 NPN TRANSISTOR Toshiba Semiconductor
2SC4843 NPN TRANSISTOR Toshiba Semiconductor
2SC4844 NPN TRANSISTOR Toshiba Semiconductor

Other Datasheets by Inchange Semiconductor

Part Number Description
2SC4848 NPN Transistor
2SC4849 NPN Transistor
2SC4830 NPN Transistor
2SC4833 NPN Transistor
2SC4834 NPN Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4847 DESCRIPTION ·Low Collector Saturation Voltage ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V (Min) ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in humidifier , DC/DC converter and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 5 A ICM Collector Current-Pulse 10 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 1 A 60 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc