Wide SOA(safe operating area)
Ideal for color TV chroma output and amplification
of video signals
100% avalanche tested
Minimum Lot-to-Lot variations for robust device
performance and
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isc Silicon NPN Power Transistor
DESCRIPTION ·High breakdown voltage(BVceo=300V). ·Low collector output capacitance(Typ.3pF@Vce=30V). ·Wide SOA(safe operating area) ·Ideal for color TV chroma output and amplification
of video signals ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for medium power transistor(Chroma Output)
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
300
V
VCEO
Collector-Emitter Voltage
300
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
0.