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2SC5147 - NPN Transistor

General Description

High breakdown voltage(BVceo=300V).

Low collector output capacitance(Typ.3pF@Vce=30V).

Wide SOA(safe operating area) Ideal for color TV chroma output and amplification of video signals 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and

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isc Silicon NPN Power Transistor DESCRIPTION ·High breakdown voltage(BVceo=300V). ·Low collector output capacitance(Typ.3pF@Vce=30V). ·Wide SOA(safe operating area) ·Ideal for color TV chroma output and amplification of video signals ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for medium power transistor(Chroma Output) ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 0.