Datasheet4U Logo Datasheet4U.com

2SC5198 - NPN Transistor

General Description

Low Collector Saturation Voltage- : VCE(sat)= 2.0V(Min) @IC= 7A Good Linearity of hFE Complement to Type 2SA1941 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Recommend for 70W high fidelity

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SC5198 NPN Transistor Toshiba Semiconductor
2SC5198 Silicon NPN Transistor JILIN SINO
2SC5198 Silicon NPN transistor BLUE ROCKET ELECTRONICS
2SC5198 SILICON POWER TRANSISTOR SavantIC
2SC5198B Silicon NPN Transistor NELL SEMICONDUCTOR

Other Datasheets by Inchange Semiconductor

Part Number Description
2SC5196 NPN Transistor
2SC5197 NPN Transistor
2SC5199 NPN Transistor
2SC5100 NPN Transistor
2SC5101 NPN Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc Silicon NPN Power Transistor DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= 2.0V(Min) @IC= 7A ·Good Linearity of hFE ·Complement to Type 2SA1941 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ·Recommend for 70W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 140 V VCEO Collector-Emitter Voltage 140 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 10 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 1 A 100 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC5198 isc website：www.iscsemi.