2SC5250 Overview
IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE=400mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC=5A; IB= 1.25A VBE(sat) Base-Emitter Saturation Voltage IC=5A;.
| Part number | 2SC5250 |
|---|---|
| Datasheet | 2SC5250-INCHANGE.pdf |
| File Size | 184.83 KB |
| Manufacturer | Inchange Semiconductor |
| Description | NPN Transistor |
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IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE=400mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC=5A; IB= 1.25A VBE(sat) Base-Emitter Saturation Voltage IC=5A;.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
| 2SC5250 | Silicon NPN Transistor | Hitachi Semiconductor | |
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2SC5250 | SILICON POWER TRANSISTOR | SavantIC |