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2SC5416 - NPN Transistor

General Description

NPN triple diffused planar silicon transistor Low Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Inverter lighting applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VA

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isc Silicon NPN Power Transistors DESCRIPTION ·NPN triple diffused planar silicon transistor ·Low Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Inverter lighting applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1000 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 9 V IC Collector Current-Continuous 4 A ICM Collector Current-Peak 8 A IB Base Current-Continuous PT Total Power Dissipation @ TC=25℃ TJ Junction Temperature 1 A 35 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 3.