Inchange Semiconductor 2SC5411
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SC5411 |
|---|---|
| Datasheet | 2SC5411 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | PNP Transistor |
| Buy | Stock & Price |
DESCRIPTION
● With TO-3PFa packaging● High collector-base voltage
● High power dissipation
● Low saturation voltage
● Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
● Power amplifier applicationsABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 14 A ICM Collector Current-Peak 28 A IB Base Current- Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 7 A 60 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website： isc & iscsemi is registered trademark isc Silicon PNP Power TransistorELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVCBO Collector-Base Breakdown Voltage IC= 0.1mA ; IE= 0 BVCEO Collector-Emitter Breakdown Voltage IC= 1mA ; IB= 0 BVEBO Emitter-Base Breakdown Voltage IE= 0.1mA ; IC= 0 VCE(sat) Collector-Emitter Satu...