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2SC5411 - PNP Transistor

General Description

With TO-3PFa packaging High collector-base voltage High power dissipation Low saturation voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL

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isc Silicon PNP Power Transistor 2SC5411 DESCRIPTION · With TO-3PFa packaging · High collector-base voltage · High power dissipation · Low saturation voltage · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 14 A ICM Collector Current-Peak 28 A IB Base Current- Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 7 A 60 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.