Datasheet Details
| Part number | 2SC5416 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 179.56 KB |
| Description | NPN Transistor |
| Datasheet | 2SC5416-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistors.
| Part number | 2SC5416 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 179.56 KB |
| Description | NPN Transistor |
| Datasheet | 2SC5416-INCHANGE.pdf |
|
|
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·NPN triple diffused planar silicon transistor ·Low Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Inverter lighting applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1000 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 9 V IC Collector Current-Continuous 4 A ICM Collector Current-Peak 8 A IB Base Current-Continuous PT Total Power Dissipation @ TC=25℃ TJ Junction Temperature 1 A 35 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 3.57 ℃/W INCHANGE Semiconductor 2SC5416 isc Website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors INCHANGE Semiconductor 2SC5416 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2.0A;
IB= 0.4A VBE(sat) Base-Emitter Saturation Voltage IC= 2.0A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SC5416 | NPN TRANSISTOR | Sanyo Semicon Device |
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2SC5416 | SILICON POWER TRANSISTOR | SavantIC |
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2SC5416LS | NPN TRANSISTOR | Wing Shing Computer Components |
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