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isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC5694
DESCRIPTION ·High speed switching ·Large Current Capacity ·High allowable power dissipation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Relay drivers,lanp drivers,motor drivers and
printer drivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
60
V
VCEO
Collector-Emitter Voltage
50
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
7
A
ICM
Collector Current-Peak
Collector Power Dissipation @ TC=25℃
PC Collector Power Dissipation @ Ta=25℃
TJ
Junction Temperature
10
A
10 W
1.2
150
℃
Tstg
Storage Temperature Range
-55~150
℃
isc Website:www.iscsemi.