Datasheet Details
| Part number | 2SC897 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 180.23 KB |
| Description | PNP Transistor |
| Download | 2SC897 Download (PDF) |
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|
| Part number | 2SC897 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 180.23 KB |
| Description | PNP Transistor |
| Download | 2SC897 Download (PDF) |
|
|
|
·With TO-3 packaging ·Large collector current ·Low collector saturation voltage ·High power dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in DC-DC converter ·Driver of solenoid or motor ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 90 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 7 A ICP Collector Current-Pulse PC Collector Power Dissipation 12 A 60 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SC897 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA;
RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= 5mA;
IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 5mA;
isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SC897.
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