Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 200V(Min)
High DC Current Gain
: hFE= 1500(Min) @IC= 5A
Low Saturation Voltage
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for general purpoe amplifier application
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isc Silicon NPN Darlington Power Transistor
2SD1025
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 200V(Min) ·High DC Current Gain
: hFE= 1500(Min) @IC= 5A ·Low Saturation Voltage ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for general purpoe amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
200
V
VCEO
Collector-Emitter Voltage
200
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
8
A
ICP
Collector Current-Peak
12
A
IB
Base Current-Continuous
0.
2SD1025 Datasheet
