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2SD1047 Datasheet Preview

2SD1047 Datasheet

NPN Transistor

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isc Silicon NPN Power Transistor
2SD1047
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 140V(Min)
·Good Linearity of hFE
·High Current Capability
·Wide Area of Safe Operation
·Complement to Type 2SB817
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Recommend for 60W audio frequency amplifier output
stage applications
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
160
V
VCEO
Collector-Emitter Voltage
140
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
12
A
ICP
Collector Current-Pulse
PC
Collector Power Dissipation
@ TC=25
TJ
Junction Temperature
15
A
100
W
150
Tstg
Storage Temperature Range
-40~150
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




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2SD1047 Datasheet Preview

2SD1047 Datasheet

NPN Transistor

No Preview Available !

isc Silicon NPN Power Transistor
2SD1047
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO Collector-Emitter Breakdown Voltage
V(BR)CBO Collector-Base Breakdown Voltage
V(BR)EBO Emitter-Base Breakdown Voltage
VCE(sat) Collector-Emitter Saturation Voltage
VBE(on) Base -Emitter On Voltage
ICBO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
hFE-1
DC Current Gain
hFE-2
DC Current Gain
COB
Output Capacitance
fT
Current-Gain—Bandwidth Product
Switching times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
CONDITIONS
IC= 30mA ; RBE=
IC=1mA; IE= 0
IE= 5mA; IC= 0
IC= 5.0A; IB= 0.5A
IC= 1A ; VCE= 5V
VCB= 80V ; IE= 0
VEB= 4V; IC= 0
IC= 1A ; VCE= 5V
IC= 6A ; VCE= 5V
IE= 0;VCB= 10V;ftest= 1.0MHz
IC= 1A ; VCE= 5V
IC= 1A ,RL= 20Ω,
IB1= IB2= 0.1A,VCC= 20V
MIN TYP. MAX UNIT
140
V
160
V
6
V
0.6 2.5
V
1.5
V
100 μA
100 μA
60
200
20
210
pF
15
MHz
0.26
μs
6.88
μs
0.68
μs
hFE-1 Classifications
D
E
60-120 100-200
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark


Part Number 2SD1047
Description NPN Transistor
Maker INCHANGE
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