STMicroelectronics 2SD1047
The device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour.| Part No. | 2SD1047 |
|---|---|
| Datasheet | 2SD1047 Download |
| Manufacturer |  STMicroelectronics |
| Description | NPN Transistor |
| Buy | Stock & Price |
FEATURES
● High breakdown voltage VCEO = 140 V● Typical ft = 20 MHz
● Fully characterized at 125 oC Application
● Power supply
DESCRIPTION
3 2 1 TO-3P Figure 1. Internal schematic diagram Table 1. Device summary Order code 2SD1047 April 2011 Marking 2SD1047 Package TO-3P Doc ID 018729 Rev 1 Packaging Tube 1/10 10 Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter VCBO VCEO VEBO IC ICM Ptot Tstg TJ Collector-base voltage (IE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage (IC = 0) Collector current Collector peak current (tP < 5 ms) Total dissipation at Tc = 25 °C Storage temperature Max. operating junction temperature Table 3. Symbol Rthj-case Thermal data Parameter Thermal resistance junction-case ____max 2SD1047 Value 200 140 6 12 20 100 -65 to 150 150 Unit V V V A A W °C °C Value 1.25 Unit °C/W 2/10 Doc ID 018729 Rev 1 2SD1047 2 Electrical characteristics Electrical characteristics (Tcase = 25 °C; unless otherwise specified) Table 4.
