Datasheet Summary
isc Silicon NPN Power Transistor
DESCRIPTION
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 140V(Min)
- Good Linearity of hFE
- High Current Capability
- Wide Area of Safe Operation
- plement to Type 2SB817
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Remend for 60W audio frequency amplifier output stage...
