Inchange Semiconductor 2SD1047
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SD1047 |
|---|---|
| Datasheet | 2SD1047 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | NPN Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min)●Good Linearity of hFE
●High Current Capability
●Wide Area of Safe Operation
●Complement to Type 2SB817
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Recommend for 60W audio frequency amplifier output stage applicationsABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 140 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 12 A ICP Collector Current-Pulse PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 15 A 100 W 150 ℃ Tstg Storage Temperature Range -40~150 ℃ isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SD1047ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage V(BR)CBO Collector-Base Breakdown Voltage V(BR)EBO Emitter-Base Breakdown Voltage VCE(sat)...