Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 140V(Min)
Good Linearity of hFE
High Current Capability
Wide Area of Safe Operation
Complement to Type 2SB817
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Recommend
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isc Silicon NPN Power Transistor
2SD1047
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 140V(Min) ·Good Linearity of hFE ·High Current Capability ·Wide Area of Safe Operation ·Complement to Type 2SB817 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Recommend for 60W audio frequency amplifier output
stage applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
160
V
VCEO
Collector-Emitter Voltage
140
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
12
A
ICP
Collector Current-Pulse
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
15
A
100
W
150
℃
Tstg
Storage Temperature Range
-40~150
℃
isc website：www.iscsemi.
2SD1047 Datasheet
