Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 140V(Min)
Good Linearity of hFE
High Current Capability
Wide Area of Safe Operation
Complement to Type 2SB817E
Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS
Designed
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isc Silicon NPN Power Transistor
isc Product Specification
2SD1047E
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 140V(Min) ·Good Linearity of hFE ·High Current Capability ·Wide Area of Safe Operation ·Complement to Type 2SB817E ·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS ·Designed for audio frequency amplifier output
stage applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO VCEO VEBO
IC ICP PC TJ
Collector-Base Voltage Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous Collector Current-Pulse Collector Power Dissipation @ TC=25℃ Junction Temperature
160
V
140
V
6
V
12
A
15
A
100
W
150
℃
Tstg
Storage Temperature Range
-40~150
℃
isc website：www
2SD1047E Datasheet
