Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min) Good Linearity of hFE High Current Capability Wide Area of Safe Operation Complement to Type 2SB817E Minimum Lot-to-Lot variations for robust device performance and reliable operation.
Datasheets by Manufacturer
2SD1049 — Fuji Electric — TRIPLE DIFFUSED PLANER TYPE TRANSISTOR