Datasheet Details
| Part number | 2SD1040 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 192.16 KB |
| Description | NPN Transistor |
| Datasheet | 2SD1040-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1040.
| Part number | 2SD1040 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 192.16 KB |
| Description | NPN Transistor |
| Datasheet | 2SD1040-INCHANGE.pdf |
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·High Current Capability ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in switching regulators, inverters, wide- band amplifiers and power oscillators in industrial and commercial applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector- Base Voltage 150 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 15 A IB Base Current-Continuous 5 A PC Collector Power Dissipation @TC=25℃ 150 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 1.25 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1040 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA ;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 15A;
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