Datasheet Details
| Part number | 2SD1046 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 216.68 KB |
| Description | NPN Transistor |
| Datasheet | 2SD1046-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1046.
| Part number | 2SD1046 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 216.68 KB |
| Description | NPN Transistor |
| Datasheet | 2SD1046-INCHANGE.pdf |
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·Good Linearity of hFE ·High Current Capability ·Wide Area of Safe Operation ·plement to Type 2SB816 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For LF power amplifier, 50W output large power switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 8 A ICP Collector Current-Pulse PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 12 A 80 W 150 ℃ Tstg Storage Temperature Range -40~150 ℃ isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SD1046 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SD1046 | PNP/NPN Epitaxial Planar Silicon Transistors | Sanyo Semicon Device |
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2SD1046 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SD1040 | NPN Transistor |
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| 2SD1016 | NPN Transistor |
| 2SD1022 | NPN Transistor |
| 2SD1023 | NPN Transistor |
| 2SD1024 | NPN Transistor |
| 2SD1025 | NPN Transistor |
| 2SD1031 | NPN Transistor |