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2SD1046 - NPN Transistor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) Good Linearity of hFE High Current Capability Wide Area of Safe Operation Complement to Type 2SB816 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For LF po

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1046 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·Good Linearity of hFE ·High Current Capability ·Wide Area of Safe Operation ·Complement to Type 2SB816 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For LF power amplifier, 50W output large power switching applications.