Datasheet Details
| Part number | 2SD1049 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 209.61 KB |
| Description | NPN Transistor |
| Datasheet | 2SD1049-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor 2SD1049.
| Part number | 2SD1049 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 209.61 KB |
| Description | NPN Transistor |
| Datasheet | 2SD1049-INCHANGE.pdf |
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|
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·High Current Capability ·Fast Switching Speed ·High Reliability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulators ·Motor controls ·High frequency inverters ·General purpose power amplifiers Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature Tstg Storage Temperature Range VALUE UNIT 120 V 80 V 7 V 25 A 5 A 80 W 150 ℃ -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.55 ℃/W isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA;
IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 0.1mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SD1049 | SILICON POWER TRANSISTOR | SavantIC |
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2SD1049 | TRIPLE DIFFUSED PLANER TYPE | New Jersey Semi-Conductor |
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