2SD1049
DESCRIPTION
- High Current Capability
- Fast Switching Speed
- High Reliability
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Switching regulators
- Motor controls
- High frequency inverters
- General purpose power amplifiers
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
Collector Current-Continuous
Base Current-Continuous
Collector Power Dissipation @TC=25℃
Tj
Junction Temperature
Tstg
Storage Temperature Range
VALUE UNIT
℃
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case 1.55 ℃/W isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS...
