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2SD1044 - Silicon NPN Darlington Power Transistor

General Description

High DC Current Gain : hFE= 700(Min.)@ IC= 1A, VCE= 4V High Collector-Emitter Breakdown Voltage- : V(BR) CEO= 80V(Min) Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power amplifie

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isc Silicon NPN Darlington Power Transistor DESCRIPTION ·High DC Current Gain : hFE= 700(Min.)@ IC= 1A, VCE= 4V ·High Collector-Emitter Breakdown Voltage- : V(BR) CEO= 80V(Min) ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCER Collector-Emitter Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 6 A IB Base Current- Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 3 A 60 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD1044 isc website：www.