2SD1110 Overview
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·Good Linearity of hFE ·plement to Type 2SB849 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency power amplifier applications. 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SD1110 TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat)...
